Multiquantum well structure with an average electron mobility of 4.0106 cm2/V s
نویسندگان
چکیده
We report a modulation-doped multiquantum well structure which suppresses the usual ambient light effect associated with modulation doping. Ten GaAs quantum wells 300-h; wide are symmetrically modulation doped using Si S doping at the center of 3600:A-wide Ab.,G%,As barriers. The low field mobility of each well is 4.0X lo6 cm/V s at a density of 6.4X 10” cme2 measured at 0.3 K either in the dark, or during, or after, exposure to light. This mobility is an order of magnitude improvement over previous work on multiwells.
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